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| SEMICONDUCTOR TECHNICAL DATA Protection in Portable Electronics Applications. PG05BSESC TVS Diode for ESD Protection in Portable Electronics FEATURES Transient voltage protection for data lines. IEC 61000-4-2(ESD) 15kV(Air), 8kV(Contact). Small package for portable electronics. Suitable replacement for Varistors in ESD protection applications. Protects one I/O or power line. Low clamping voltage. Low leakage current. CATHODE MARK C 1 E 2 D F B A APPLICATIONS Cell phone handsets and accessories. Microprocessor based equipment. Personal digital assistants (PDA s). Notebooks, desktops, & servers. Portable instrument Pagers peripherals. 1. ANODE 2. CATHODE DIM A B C D E F MILLIMETERS _ 1.60 + 0.10 _ 1.20 + 0.10 _ 0.80 + 0.10 _ 0.30 + 0.05 _ 0.60 + 0.10 _ 0.13 + 0.05 ESC MAXIMUM RATING (Ta=25 CHARACTERISTIC Peak Pulse Power (tp=8/20 ) Peak Pulse Current (tp=8/20 ) Junction Temperature Storage Temperature ) SYMBOL PPK IPP Tj Tstg RATING 30 1.6 150 -55 150 UNIT W A Marking Type Name D2 ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC Reverse Stand-Off Voltage Reverse Breakdown Voltage Reverse Leakage Current Claming Voltage Series Resistance Junction Capacitance SYMBOL VRWM VBR IR VC RS CJ It=5mA VRWM=3.5V IPP=1A, tp=8/20 IPP=1.6A, tp=8/20 VR=1V, f=900MHz VR=0V, f=1MHz TEST CONDITION MIN. 6.65 TYP. MAX. 5 7.45 0.5 12 18 60 5.0 pF UNIT V V A V V 2007. 5. 15 Revision No : 1 1/2 PG05BSESC NON-REPETITIVE PEAK PULSE POWER VS. PULSE TIME PEAK PULSE POWER PP P (W) 1K 110 POWER DERATION CURVE RATED POWER OR IPP (%) 100 100 90 80 70 60 50 40 30 20 10 0 0 25 50 Peak Pulse Power 8/20us Average Power 10 1 10 100 75 100 125 150 PULSE DURATION tP (s) AMBIENT TEMPERATURE Ta ( C) PULSE WAVEFORM PEAK PULSE CURRENT IPP (%) 110 4 Waveform Parameters : tr=8s td=20s e -t CJ - VR CAPACITANCE CJ (pF) 100 90 80 70 60 50 40 30 20 10 0 0 5 10 3 2 td=lpp/2 1 15 20 25 30 0 0 1 2 3 4 5 TIME (s) REVERSE VOLTAGE VR (V) 2007. 5. 15 Revision No : 1 2/2 |
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